High frequency resistive switching behavior of amorphous TiO(2) and NiO

Resistive switching (RS) of Transition Metal Oxides (TMOs) has become not only an attractive choice for the development of next generation non-volatile memory, but also as a suitable family of materials capable of supporting high-frequency and high-speed switching needed for the next generation wire...

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Detalles Bibliográficos
Autores principales: Bulja, Senad, Kopf, Rose, Tate, Al, Cappuzzo, Mark, Kozlov, Dmitry, Claussen, Holger, Wiegner, Dirk, Templ, Wolfgang, Mirshekar-Syahkal, Dariush
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9376065/
https://www.ncbi.nlm.nih.gov/pubmed/35963936
http://dx.doi.org/10.1038/s41598-022-16907-8

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9376065/
https://www.ncbi.nlm.nih.gov/pubmed/35963936
http://dx.doi.org/10.1038/s41598-022-16907-8

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