High frequency resistive switching behavior of amorphous TiO(2) and NiO

Resistive switching (RS) of Transition Metal Oxides (TMOs) has become not only an attractive choice for the development of next generation non-volatile memory, but also as a suitable family of materials capable of supporting high-frequency and high-speed switching needed for the next generation wireless communication technologies, such as 6G. The exact mechanism of RS is not yet clearly understood; however, it is widely accepted to be related to the formation and rupture of sub-stoichiometric conductive filaments (Magnéli phases) of the respective oxides upon activation. Here, we examine the switching behaviour of amorphous TiO(2) and NiO both under the DC regime and in the high frequency mode. We show that the DC resistance of amorphous TiO(2) is invariant of the length of the active region. In contrast, the resistance of the NiO samples exhibits a strong dependence on the length, and its DC resistance reduces as the length is increased. We further show that the high frequency switching characteristics of TiO(2), reflected in insertion losses in the ON state and isolation in the OFF state, are far superior to those of NiO. Fundamental inferences stem from these findings, which not only enrich our understanding of the mechanism of conduction in binary/multinary oxides but are essential for the enablement of widespread use of binary/multinary oxides in emerging non-volatile memory and 6G mm-wave applications. As an example of a possible application supported by TMOs, is a Reflective-Type Variable Attenuator (RTVA), shown here. It is designed to operate at a centre frequency of 15 GHz. The results indicate that it has a dynamic range of no less than 18 dB with a maximum insertion loss of 2.1 dB.