Atomic Layer Deposition of Metal Oxides and Chalcogenides for High Performance Transistors

Atomic layer deposition (ALD) is a deposition technique well‐suited to produce high‐quality thin film materials at the nanoscale for applications in transistors. This review comprehensively describes the latest developments in ALD of metal oxides (MOs) and chalcogenides with tunable bandgaps, compos...

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Detalles Bibliográficos
Autores principales: Shen, Chengxu, Yin, Zhigang, Collins, Fionn, Pinna, Nicola
Formato: Online Artículo Texto
Lenguaje:English
Publicado: John Wiley and Sons Inc. 2022
Materias:
Reviews
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9376853/
https://www.ncbi.nlm.nih.gov/pubmed/35712776
http://dx.doi.org/10.1002/advs.202104599

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9376853/
https://www.ncbi.nlm.nih.gov/pubmed/35712776
http://dx.doi.org/10.1002/advs.202104599

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