Suppression of stacking fault expansion in a 4H-SiC epitaxial layer by proton irradiation

SiC bipolar degradation, which is caused by stacking fault expansion from basal plane dislocations in a SiC epitaxial layer or near the interface between the epitaxial layer and the substrate, is one of the critical problems inhibiting widespread usage of high-voltage SiC bipolar devices. In the pre...

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Detalles Bibliográficos
Autores principales: Harada, Shunta, Mii, Toshiki, Sakane, Hitoshi, Kato, Masashi
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9378728/
https://www.ncbi.nlm.nih.gov/pubmed/35970877
http://dx.doi.org/10.1038/s41598-022-17060-y

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9378728/
https://www.ncbi.nlm.nih.gov/pubmed/35970877
http://dx.doi.org/10.1038/s41598-022-17060-y

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