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Suppression of stacking fault expansion in a 4H-SiC epitaxial layer by proton irradiation
SiC bipolar degradation, which is caused by stacking fault expansion from basal plane dislocations in a SiC epitaxial layer or near the interface between the epitaxial layer and the substrate, is one of the critical problems inhibiting widespread usage of high-voltage SiC bipolar devices. In the pre...
| Autores principales: | , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
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Nature Publishing Group UK
2022
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9378728/ https://www.ncbi.nlm.nih.gov/pubmed/35970877 http://dx.doi.org/10.1038/s41598-022-17060-y |