High-Efficient Spin Injection in GaN at Room Temperature Through A Van der Waals Tunnelling Barrier

Achieving high-efficient spin injection in semiconductors is critical for developing spintronic devices. Although a tunnel spin injector is typically used, the construction of a high-quality tunnel barrier remains a significant challenge due to the large lattice mismatch between oxides and semicondu...

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Detalles Bibliográficos
Autores principales: Lin, Di, Kang, Wenyu, Wu, Qipeng, Song, Anke, Wu, Xuefeng, Liu, Guozhen, Wu, Jianfeng, Wu, Yaping, Li, Xu, Wu, Zhiming, Cai, Duanjun, Yin, Jun, Kang, Junyong
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2022
Materias:
Research
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9378808/
https://www.ncbi.nlm.nih.gov/pubmed/35969318
http://dx.doi.org/10.1186/s11671-022-03712-5

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9378808/
https://www.ncbi.nlm.nih.gov/pubmed/35969318
http://dx.doi.org/10.1186/s11671-022-03712-5

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