Compensation of the Stress Gradient in Physical Vapor Deposited Al(1−x)Sc(x)N Films for Microelectromechanical Systems with Low Out-of-Plane Bending

Thin film through-thickness stress gradients produce out-of-plane bending in released microelectromechanical systems (MEMS) structures. We study the stress and stress gradient of Al(0.68)Sc(0.32)N thin films deposited directly on Si. We show that Al(0.68)Sc(0.32)N cantilever structures realized in f...

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Detalles Bibliográficos
Autores principales: Beaucejour, Rossiny, D’Agati, Michael, Kalyan, Kritank, Olsson, Roy H.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9394260/
https://www.ncbi.nlm.nih.gov/pubmed/35893167
http://dx.doi.org/10.3390/mi13081169

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9394260/
https://www.ncbi.nlm.nih.gov/pubmed/35893167
http://dx.doi.org/10.3390/mi13081169

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