Atomic transistors based on seamless lateral metal-semiconductor junctions with a sub-1-nm transfer length

The edge-to-edge connected metal-semiconductor junction (MSJ) for two-dimensional (2D) transistors has the potential to reduce the contact length while improving the performance of the devices. However, typical 2D materials are thermally and chemically unstable, which impedes the reproducible achiev...

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Detalles Bibliográficos
Autores principales: Song, Seunguk, Yoon, Aram, Ha, Jong-Kwon, Yang, Jihoon, Jang, Sora, Leblanc, Chloe, Wang, Jaewon, Sim, Yeoseon, Jariwala, Deep, Min, Seung Kyu, Lee, Zonghoon, Kwon, Soon-Yong
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9395343/
https://www.ncbi.nlm.nih.gov/pubmed/35995776
http://dx.doi.org/10.1038/s41467-022-32582-9

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9395343/
https://www.ncbi.nlm.nih.gov/pubmed/35995776
http://dx.doi.org/10.1038/s41467-022-32582-9

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