3-D stacked polycrystalline-silicon-MOSFET-based capacitorless DRAM with superior immunity to grain-boundary’s influence

In this paper, a capacitorless one-transistor dynamic random access memory (1 T-DRAM) based on a polycrystalline silicon (poly-Si) metal-oxide-semiconductor field-effect transistor with the asymmetric dual-gate (ADG) structure is designed and analyzed through a technology computer-aided design (TCAD...

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Detalles Bibliográficos
Autores principales: Lee, Sang Ho, Park, Jin, Min, So Ra, Kim, Geon Uk, Jang, Jaewon, Bae, Jin-Hyuk, Lee, Sin-Hyung, Kang, In Man
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9402569/
https://www.ncbi.nlm.nih.gov/pubmed/36002621
http://dx.doi.org/10.1038/s41598-022-18682-y

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9402569/
https://www.ncbi.nlm.nih.gov/pubmed/36002621
http://dx.doi.org/10.1038/s41598-022-18682-y

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