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3-D stacked polycrystalline-silicon-MOSFET-based capacitorless DRAM with superior immunity to grain-boundary’s influence
In this paper, a capacitorless one-transistor dynamic random access memory (1 T-DRAM) based on a polycrystalline silicon (poly-Si) metal-oxide-semiconductor field-effect transistor with the asymmetric dual-gate (ADG) structure is designed and analyzed through a technology computer-aided design (TCAD...
| Autores principales: | , , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group UK
2022
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9402569/ https://www.ncbi.nlm.nih.gov/pubmed/36002621 http://dx.doi.org/10.1038/s41598-022-18682-y |