Atomic Layer Deposition of Large-Area Polycrystalline Transition Metal Dichalcogenides from 100 °C through Control of Plasma Chemistry

[Image: see text] Two-dimensional transition metal dichalcogenides, such as MoS(2), are intensely studied for applications in electronics. However, the difficulty of depositing large-area films of sufficient quality under application-relevant conditions remains a major challenge. Herein, we demonstrate deposition of polycrystalline, wafer-scale MoS(2), TiS(2), and WS(2) films of controlled thickness at record-low temperatures down to 100 °C using plasma-enhanced atomic layer deposition. We show that preventing excess sulfur incorporation from H(2)S-based plasma is the key to deposition of crystalline films, which can be achieved by adding H(2) to the plasma feed gas. Film composition, crystallinity, growth, morphology, and electrical properties of MoS(x) films prepared within a broad range of deposition conditions have been systematically characterized. Film characteristics are correlated with results of field-effect transistors based on MoS(2) films deposited at 100 °C. The capability to deposit MoS(2) on poly(ethylene terephthalate) substrates showcases the potential of our process for flexible devices. Furthermore, the composition control achieved by tailoring plasma chemistry is relevant for all low-temperature plasma-enhanced deposition processes of metal chalcogenides.