MOCVD Growth and Characterization of Be-Doped GaN

[Image: see text] Beryllium has been considered a potential alternative to magnesium as a p-type dopant in GaN, but attempts to produce conductive p-GaN:Be have not been successful. Photoluminescence studies have repeatedly shown Be to have an acceptor level shallower than that of Mg, but deep Be de...

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Detalles Bibliográficos
Autores principales: McEwen, Benjamin, Reshchikov, Michael A., Rocco, Emma, Meyers, Vincent, Hogan, Kasey, Andrieiev, Oleksandr, Vorobiov, Mykhailo, Demchenko, Denis O., Shahedipour-Sandvik, Fatemeh
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2022
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9407647/
https://www.ncbi.nlm.nih.gov/pubmed/36035967
http://dx.doi.org/10.1021/acsaelm.1c01276

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9407647/
https://www.ncbi.nlm.nih.gov/pubmed/36035967
http://dx.doi.org/10.1021/acsaelm.1c01276

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