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MOCVD Growth and Characterization of Be-Doped GaN
[Image: see text] Beryllium has been considered a potential alternative to magnesium as a p-type dopant in GaN, but attempts to produce conductive p-GaN:Be have not been successful. Photoluminescence studies have repeatedly shown Be to have an acceptor level shallower than that of Mg, but deep Be de...
| Autores principales: | , , , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
American Chemical Society
2022
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9407647/ https://www.ncbi.nlm.nih.gov/pubmed/36035967 http://dx.doi.org/10.1021/acsaelm.1c01276 |