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Electrical resistivity of polycrystalline graphene: effect of grain-boundary-induced strain fields

We have revealed the decisive role of grain-boundary-induced strain fields in electron scattering in polycrystalline graphene. To this end, we have formulated the model based on Boltzmann transport theory which properly takes into account the microscopic structure of grain boundaries (GB) as a repea...

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Detalles Bibliográficos
Autores principales: Krasavin, S. E., Osipov, V. A.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2022
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9411566/
https://www.ncbi.nlm.nih.gov/pubmed/36008503
http://dx.doi.org/10.1038/s41598-022-18604-y