Comparative Characterization of NWFET and FinFET Transistor Structures Using TCAD Modeling

A complete comparison for 14 nm FinFET and NWFET with stacked nanowires was carried out. The electrical and thermal performances in two device structures were analyzed based on TCAD simulation results. The electro-thermal TCAD models were calibrated to data measured on 30–7 nm FinFETs and NWFETs. Th...

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Detalles Bibliográficos
Autores principales: Petrosyants, Konstantin O., Silkin, Denis S., Popov, Dmitriy A.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9412458/
https://www.ncbi.nlm.nih.gov/pubmed/36014213
http://dx.doi.org/10.3390/mi13081293

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9412458/
https://www.ncbi.nlm.nih.gov/pubmed/36014213
http://dx.doi.org/10.3390/mi13081293

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