Comparative Characterization of NWFET and FinFET Transistor Structures Using TCAD Modeling

A complete comparison for 14 nm FinFET and NWFET with stacked nanowires was carried out. The electrical and thermal performances in two device structures were analyzed based on TCAD simulation results. The electro-thermal TCAD models were calibrated to data measured on 30–7 nm FinFETs and NWFETs. Th...

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Autores principales: Petrosyants, Konstantin O., Silkin, Denis S., Popov, Dmitriy A.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9412458/
https://www.ncbi.nlm.nih.gov/pubmed/36014213
http://dx.doi.org/10.3390/mi13081293
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author Petrosyants, Konstantin O.
Silkin, Denis S.
Popov, Dmitriy A.
author_facet Petrosyants, Konstantin O.
Silkin, Denis S.
Popov, Dmitriy A.
author_sort Petrosyants, Konstantin O.
collection PubMed
description A complete comparison for 14 nm FinFET and NWFET with stacked nanowires was carried out. The electrical and thermal performances in two device structures were analyzed based on TCAD simulation results. The electro-thermal TCAD models were calibrated to data measured on 30–7 nm FinFETs and NWFETs. The full set of output electrical device parameters I(on), I(off), SS, V(th), and maximal device temperature Tmax was discussed to achieve the optimum VLSI characteristics.
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spelling pubmed-94124582022-08-27 Comparative Characterization of NWFET and FinFET Transistor Structures Using TCAD Modeling Petrosyants, Konstantin O. Silkin, Denis S. Popov, Dmitriy A. Micromachines (Basel) Article A complete comparison for 14 nm FinFET and NWFET with stacked nanowires was carried out. The electrical and thermal performances in two device structures were analyzed based on TCAD simulation results. The electro-thermal TCAD models were calibrated to data measured on 30–7 nm FinFETs and NWFETs. The full set of output electrical device parameters I(on), I(off), SS, V(th), and maximal device temperature Tmax was discussed to achieve the optimum VLSI characteristics. MDPI 2022-08-11 /pmc/articles/PMC9412458/ /pubmed/36014213 http://dx.doi.org/10.3390/mi13081293 Text en © 2022 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Petrosyants, Konstantin O.
Silkin, Denis S.
Popov, Dmitriy A.
Comparative Characterization of NWFET and FinFET Transistor Structures Using TCAD Modeling
title Comparative Characterization of NWFET and FinFET Transistor Structures Using TCAD Modeling
title_full Comparative Characterization of NWFET and FinFET Transistor Structures Using TCAD Modeling
title_fullStr Comparative Characterization of NWFET and FinFET Transistor Structures Using TCAD Modeling
title_full_unstemmed Comparative Characterization of NWFET and FinFET Transistor Structures Using TCAD Modeling
title_short Comparative Characterization of NWFET and FinFET Transistor Structures Using TCAD Modeling
title_sort comparative characterization of nwfet and finfet transistor structures using tcad modeling
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9412458/
https://www.ncbi.nlm.nih.gov/pubmed/36014213
http://dx.doi.org/10.3390/mi13081293
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