Cargando…

Comparative Characterization of NWFET and FinFET Transistor Structures Using TCAD Modeling

A complete comparison for 14 nm FinFET and NWFET with stacked nanowires was carried out. The electrical and thermal performances in two device structures were analyzed based on TCAD simulation results. The electro-thermal TCAD models were calibrated to data measured on 30–7 nm FinFETs and NWFETs. Th...

Descripción completa

Detalles Bibliográficos
Autores principales:	Petrosyants, Konstantin O., Silkin, Denis S., Popov, Dmitriy A.
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2022
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9412458/ https://www.ncbi.nlm.nih.gov/pubmed/36014213 http://dx.doi.org/10.3390/mi13081293

Ejemplares similares

Toward quantum FinFET
por: Han, Weihua, et al.
Publicado: (2013)

Novel 14-nm Scallop-Shaped FinFETs (S-FinFETs) on Bulk-Si Substrate
por: Xu, Weijia, et al.
Publicado: (2015)

Comprehensive Power Gain Assessment of GaN-SOI-FinFET for Improved RF/Wireless Performance Using TCAD
por: Kumar, Ajay, et al.
Publicado: (2022)

Diamond FinFET without Hydrogen Termination
por: Huang, Biqin, et al.
Publicado: (2018)

3D modeling of dual-gate FinFET
por: Mil’shtein, Samson, et al.
Publicado: (2012)

Diamond lateral FinFET with triode-like behavior
por: Huang, Biqin, et al.
Publicado: (2020)

A FinFET with one atomic layer channel
por: Chen, Mao-Lin, et al.
Publicado: (2020)

Unraveling structural and compositional information in 3D FinFET electronic devices
por: Trombini, Henrique, et al.
Publicado: (2019)

High-Performance P- and N-Type SiGe/Si Strained Super-Lattice FinFET and CMOS Inverter: Comparison of Si and SiGe FinFET
por: Yao, Yi-Ju, et al.
Publicado: (2023)

Investigation of the Integration of Strained Ge Channel with Si-Based FinFETs
por: Xu, Buqing, et al.
Publicado: (2022)

Embedded Micro-detectors for EUV Exposure Control in FinFET CMOS Technology
por: Wang, Chien-Ping, et al.
Publicado: (2022)

Fabrication, characterization and simulation of Ω-gate twin poly-Si FinFET nonvolatile memory
por: Yeh, Mu-Shih, et al.
Publicado: (2013)

InGaAs FinFETs Directly Integrated on Silicon by Selective Growth in Oxide Cavities
por: Convertino, Clarissa, et al.
Publicado: (2018)

A Coupling Mechanism between Flicker Noise and Hot Carrier Degradations in FinFETs
por: Liu, Minghao, et al.
Publicado: (2023)

Dynamic pH Sensor with Embedded Calibration Scheme by Advanced CMOS FinFET Technology
por: Wang, Chien-Ping, et al.
Publicado: (2019)

Detectors Array for In Situ Electron Beam Imaging by 16-nm FinFET CMOS Technology
por: Wang, Chien-Ping, et al.
Publicado: (2021)

Ultra-Low-Power FinFETs-Based TPCA-PUF Circuit for Secure IoT Devices
por: Monteiro, Cancio, et al.
Publicado: (2021)

Asymmetric Drain Extension Dual-kk Trigate Underlap FinFET Based on RF/Analog Circuit
por: Han, Ke, et al.
Publicado: (2017)

Correlated Time-0 and Hot-Carrier Stress Induced FinFET Parameter Variabilities: Modeling Approach
por: Makarov, Alexander, et al.
Publicado: (2020)

Silicon-Controlled Rectifier Embedded Diode for 7 nm FinFET Process Electrostatic Discharge Protection
por: Zhu, Xinyu, et al.
Publicado: (2022)

Design Technology Co-Optimization Strategy for Ge Fraction in SiGe Channel of SGOI FinFET
por: Li, Shixin, et al.
Publicado: (2023)

FinFET 6T-SRAM All-Digital Compute-in-Memory for Artificial Intelligence Applications: An Overview and Analysis
por: Gul, Waqas, et al.
Publicado: (2023)

Single event response of ferroelectric spacer engineered SOI FinFET at 14 nm technology node
por: Liu, Baojun, et al.
Publicado: (2023)

Systematical Investigation of Flicker Noise in 14 nm FinFET Devices towards Stochastic Computing Application
por: Dong, Danian, et al.
Publicado: (2023)

Test Pattern Design for Plasma Induced Damage on Inter-Metal Dielectric in FinFET Cu BEOL Processes
por: Su, Chi, et al.
Publicado: (2020)

Study of a hysteresis window of FinFET and fully-depleted silicon-on-insulator (FDSOI) MOSFET with ferroelectric capacitor
por: Yoon, Chankeun, et al.
Publicado: (2020)

Four-Period Vertically Stacked SiGe/Si Channel FinFET Fabrication and Its Electrical Characteristics
por: Li, Yongliang, et al.
Publicado: (2021)

Low-Temperature (≤500 °C) Complementary Schottky Source/Drain FinFETs for 3D Sequential Integration
por: Mao, Shujuan, et al.
Publicado: (2022)

Performance Degradation in Static Random Access Memory of 10 nm Node FinFET Owing to Displacement Defects
por: Bang, Minji, et al.
Publicado: (2023)

Charge Splitting In Situ Recorder (CSIR) for Real-Time Examination of Plasma Charging Effect in FinFET BEOL Processes
por: Tsai, Yi-Pei, et al.
Publicado: (2017)

Effects of Random Nanosized TiN Grain on Characteristic of Gate-All-Around FinFETs with Ferroelectric HZO Layer
por: Li, Yiming, et al.
Publicado: (2022)

Electrical characteristic fluctuation of 16-nm-gate trapezoidal bulk FinFET devices with fixed top-fin width induced by random discrete dopants
por: Huang, Wen-Tsung, et al.
Publicado: (2015)

Development and Analysis of a Three-Fin Trigate Q-FinFET for a 3 nm Technology Node with a Strained-Silicon Channel System
por: Nanda, Swagat, et al.
Publicado: (2023)

Correction to: Charge Splitting In Situ Recorder (CSIR) for Real-Time Examination of Plasma Charging Effect in FinFET BEOL Processes
por: Tsai, Yi-Pei, et al.
Publicado: (2017)

Insight into over Repair of Hot Carrier Degradation by GIDL Current in Si p-FinFETs Using Ultra-Fast Measurement Technique
por: Chang, Hao, et al.
Publicado: (2023)

Electrical characteristic fluctuation of 16-nm-gate high-κ/metal gate bulk FinFET devices in the presence of random interface traps
por: Hsu, Sheng-Chia, et al.
Publicado: (2014)

Hybrid Silicon Substrate FinFET-Metal Insulator Metal (MIM) Memristor Based Sense Amplifier Design for the Non-Volatile SRAM Cell
por: Priya, G. Lakshmi, et al.
Publicado: (2023)

A Feasible Alternative to FDSOI and FinFET: Optimization of W/La(2)O(3)/Si Planar PMOS with 14 nm Gate-Length
por: Mah, Siew Kien, et al.
Publicado: (2021)

Trench FinFET Nanostructure with Advanced Ferroelectric Nanomaterial HfZrO(2) for Sub-60-mV/Decade Subthreshold Slope for Low Power Application
por: Yan, Siao-Cheng, et al.
Publicado: (2022)

High mobility and quantum well transistors: design and TCAD simulation
por: Hellings, Geert, et al.
Publicado: (2013)

Cannot write session to /tmp/vufind_sessions/sess_dle90fkotjef5kalt5el92r6ak