Study of High-Performance GaN-Based Trench CAVET with Stepped Doping Microstructure

In this article, an innovative GaN-based trench current-aperture vertical electron transistor (CAVET) with a stepped doping microstructure is proposed and studied using Silvaco-ATLAS. According to the simulation and analyzed characteristics, the best performance renders a remarkable Baliga’s figure...

Descripción completa

Detalles Bibliográficos
Autores principales: Li, Yuan, Xu, Liang, Guo, Zhiyou, Sun, Huiqing
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9412896/
https://www.ncbi.nlm.nih.gov/pubmed/36014195
http://dx.doi.org/10.3390/mi13081273

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9412896/
https://www.ncbi.nlm.nih.gov/pubmed/36014195
http://dx.doi.org/10.3390/mi13081273

Ejemplares similares