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Study of High-Performance GaN-Based Trench CAVET with Stepped Doping Microstructure

In this article, an innovative GaN-based trench current-aperture vertical electron transistor (CAVET) with a stepped doping microstructure is proposed and studied using Silvaco-ATLAS. According to the simulation and analyzed characteristics, the best performance renders a remarkable Baliga’s figure...

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Detalles Bibliográficos
Autores principales:	Li, Yuan, Xu, Liang, Guo, Zhiyou, Sun, Huiqing
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2022
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9412896/ https://www.ncbi.nlm.nih.gov/pubmed/36014195 http://dx.doi.org/10.3390/mi13081273

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