Experimental Investigation on Ablation of 4H-SiC by Infrared Femtosecond Laser

Femtosecond laser ablation has become one of the important structural processing methods for the third-generation semiconductor material, silicon carbide (SiC), and it is gradually being employed in the manufacture of microelectromechanical systems and microelectronic devices. Experimental study has...

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Detalles Bibliográficos
Autores principales: Wang, Lukang, Zhao, You, Yang, Yu, Zhang, Manman, Zhao, Yulong
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9413136/
https://www.ncbi.nlm.nih.gov/pubmed/36014215
http://dx.doi.org/10.3390/mi13081291

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9413136/
https://www.ncbi.nlm.nih.gov/pubmed/36014215
http://dx.doi.org/10.3390/mi13081291

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