Investigation of Tunneling Effect for a N-Type Feedback Field-Effect Transistor

In this paper, the tunneling effect for a N-type feedback field-effect transistor (NFBFET) was investigated. The NFBFET has highly doped N-P junction in the channel region. When drain-source voltage is applied at the NFBFET, the aligning between conduction band of N-region and valence band of P-regi...

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Detalles Bibliográficos
Autores principales: Oh, Jong Hyeok, Yu, Yun Seop
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9413938/
https://www.ncbi.nlm.nih.gov/pubmed/36014251
http://dx.doi.org/10.3390/mi13081329

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9413938/
https://www.ncbi.nlm.nih.gov/pubmed/36014251
http://dx.doi.org/10.3390/mi13081329

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