Normally-off β-Ga(2)O(3) MOSFET with an Epitaxial Drift Layer

A normally-off β-Ga(2)O(3) metal-oxide-semiconductor field-effect transistor (MOSFET) is proposed using a technology computer-aided design (TCAD) device simulation, which employs an epitaxial drift layer grown on an n-type low-doped body layer. The low-doped body layer under the MOS gate enabled nor...

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Detalles Bibliográficos
Autores principales: Jang, Chan-Hee, Atmaca, Gökhan, Cha, Ho-Young
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9415067/
https://www.ncbi.nlm.nih.gov/pubmed/36014107
http://dx.doi.org/10.3390/mi13081185

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9415067/
https://www.ncbi.nlm.nih.gov/pubmed/36014107
http://dx.doi.org/10.3390/mi13081185

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