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Enhanced Electrical Properties of Copper Nitride Films Deposited via High Power Impulse Magnetron Sputtering

High Power Impulse Magnetron Sputtering (HiPIMS) has generated a great deal of interest by offering significant advantages such as high target ionization rate, high plasma density, and the smooth surface of the sputtered films. This study discusses the deposition of copper nitride thin films via HiP...

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Autores principales: Chen, Yin-Hung, Lee, Pei-Ing, Sakalley, Shikha, Wen, Chao-Kuang, Cheng, Wei-Chun, Sun, Hui, Chen, Sheng-Chi
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9415204/
https://www.ncbi.nlm.nih.gov/pubmed/36014680
http://dx.doi.org/10.3390/nano12162814
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author Chen, Yin-Hung
Lee, Pei-Ing
Sakalley, Shikha
Wen, Chao-Kuang
Cheng, Wei-Chun
Sun, Hui
Chen, Sheng-Chi
author_facet Chen, Yin-Hung
Lee, Pei-Ing
Sakalley, Shikha
Wen, Chao-Kuang
Cheng, Wei-Chun
Sun, Hui
Chen, Sheng-Chi
author_sort Chen, Yin-Hung
collection PubMed
description High Power Impulse Magnetron Sputtering (HiPIMS) has generated a great deal of interest by offering significant advantages such as high target ionization rate, high plasma density, and the smooth surface of the sputtered films. This study discusses the deposition of copper nitride thin films via HiPIMS at different deposition pressures and then examines the impact of the deposition pressure on the structural and electrical properties of Cu(3)N films. At low deposition pressure, Cu-rich Cu(3)N films were obtained, which results in the n-type semiconductor behavior of the films. When the deposition pressure is increased to above 15 mtorr, Cu(3)N phase forms, leading to a change in the conductivity type of the film from n-type to p-type. According to our analysis, the Cu(3)N film deposited at 15 mtorr shows p-type conduction with the lowest resistivity of 0.024 Ω·cm and the highest carrier concentration of 1.43 × 10(20) cm(−3). Furthermore, compared to the properties of Cu(3)N films deposited via conventional direct current magnetron sputtering (DCMS), the films deposited via HiPIMS show better conductivity due to the higher ionization rate of HiPIMS. These results enhance the potential of Cu(3)N films’ use in smart futuristic devices such as photodetection, photovoltaic absorbers, lithium-ion batteries, etc.
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spelling pubmed-94152042022-08-27 Enhanced Electrical Properties of Copper Nitride Films Deposited via High Power Impulse Magnetron Sputtering Chen, Yin-Hung Lee, Pei-Ing Sakalley, Shikha Wen, Chao-Kuang Cheng, Wei-Chun Sun, Hui Chen, Sheng-Chi Nanomaterials (Basel) Article High Power Impulse Magnetron Sputtering (HiPIMS) has generated a great deal of interest by offering significant advantages such as high target ionization rate, high plasma density, and the smooth surface of the sputtered films. This study discusses the deposition of copper nitride thin films via HiPIMS at different deposition pressures and then examines the impact of the deposition pressure on the structural and electrical properties of Cu(3)N films. At low deposition pressure, Cu-rich Cu(3)N films were obtained, which results in the n-type semiconductor behavior of the films. When the deposition pressure is increased to above 15 mtorr, Cu(3)N phase forms, leading to a change in the conductivity type of the film from n-type to p-type. According to our analysis, the Cu(3)N film deposited at 15 mtorr shows p-type conduction with the lowest resistivity of 0.024 Ω·cm and the highest carrier concentration of 1.43 × 10(20) cm(−3). Furthermore, compared to the properties of Cu(3)N films deposited via conventional direct current magnetron sputtering (DCMS), the films deposited via HiPIMS show better conductivity due to the higher ionization rate of HiPIMS. These results enhance the potential of Cu(3)N films’ use in smart futuristic devices such as photodetection, photovoltaic absorbers, lithium-ion batteries, etc. MDPI 2022-08-16 /pmc/articles/PMC9415204/ /pubmed/36014680 http://dx.doi.org/10.3390/nano12162814 Text en © 2022 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Chen, Yin-Hung
Lee, Pei-Ing
Sakalley, Shikha
Wen, Chao-Kuang
Cheng, Wei-Chun
Sun, Hui
Chen, Sheng-Chi
Enhanced Electrical Properties of Copper Nitride Films Deposited via High Power Impulse Magnetron Sputtering
title Enhanced Electrical Properties of Copper Nitride Films Deposited via High Power Impulse Magnetron Sputtering
title_full Enhanced Electrical Properties of Copper Nitride Films Deposited via High Power Impulse Magnetron Sputtering
title_fullStr Enhanced Electrical Properties of Copper Nitride Films Deposited via High Power Impulse Magnetron Sputtering
title_full_unstemmed Enhanced Electrical Properties of Copper Nitride Films Deposited via High Power Impulse Magnetron Sputtering
title_short Enhanced Electrical Properties of Copper Nitride Films Deposited via High Power Impulse Magnetron Sputtering
title_sort enhanced electrical properties of copper nitride films deposited via high power impulse magnetron sputtering
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9415204/
https://www.ncbi.nlm.nih.gov/pubmed/36014680
http://dx.doi.org/10.3390/nano12162814
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