Enhanced Electrical Performance and Stability of Solution-Processed Thin-Film Transistors with In(2)O(3)/In(2)O(3):Gd Heterojunction Channel Layer

The use of the semiconductor heterojunction channel layer has been explored as a method for improving the performance of metal oxide thin-film transistors (TFTs). The excellent electrical performance and stability of heterojunction TFTs is easy for vacuum-based techniques, but difficult for the solu...

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Detalles Bibliográficos
Autores principales: Li, Shasha, Zhang, Xinan, Zhang, Penglin, Song, Guoxiang, Yuan, Li
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9415699/
https://www.ncbi.nlm.nih.gov/pubmed/36014648
http://dx.doi.org/10.3390/nano12162783

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9415699/
https://www.ncbi.nlm.nih.gov/pubmed/36014648
http://dx.doi.org/10.3390/nano12162783

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