Mechanism Analysis and Multi-Scale Protection Design of GaN HEMT Induced by High-Power Electromagnetic Pulse

Currently, severe electromagnetic circumstances pose a serious threat to electronic systems. In this paper, the damage effects of a high-power electromagnetic pulse (EMP) on the GaN high-electron-mobility transistor (HEMT) were investigated in detail. The mechanism is presented by analyzing the vari...

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Detalles Bibliográficos
Autores principales: Wang, Lei, Chai, Changchun, Zhao, Tianlong, Li, Fuxing, Qin, Yingshuo, Yang, Yintang
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9416283/
https://www.ncbi.nlm.nih.gov/pubmed/36014210
http://dx.doi.org/10.3390/mi13081288

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9416283/
https://www.ncbi.nlm.nih.gov/pubmed/36014210
http://dx.doi.org/10.3390/mi13081288

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