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Mechanism Analysis and Multi-Scale Protection Design of GaN HEMT Induced by High-Power Electromagnetic Pulse
Currently, severe electromagnetic circumstances pose a serious threat to electronic systems. In this paper, the damage effects of a high-power electromagnetic pulse (EMP) on the GaN high-electron-mobility transistor (HEMT) were investigated in detail. The mechanism is presented by analyzing the vari...
Autores principales: | Wang, Lei, Chai, Changchun, Zhao, Tianlong, Li, Fuxing, Qin, Yingshuo, Yang, Yintang |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2022
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9416283/ https://www.ncbi.nlm.nih.gov/pubmed/36014210 http://dx.doi.org/10.3390/mi13081288 |
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