Impact of Generation and Relocation of Defects on Optical Degradation of Multi-Quantum-Well InGaN/GaN-Based Light-Emitting Diode

The defectiveness of InGaN-based quantum wells increases with low indium contents, due to the compressive strain induced by the lattice mismatch between the InGaN and GaN layers, and to the stronger incorporation of defects favored by the presence of indium. Such defects can limit the performance an...

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Detalles Bibliográficos
Autores principales: Casu, Claudia, Buffolo, Matteo, Caria, Alessandro, De Santi, Carlo, Zanoni, Enrico, Meneghesso, Gaudenzio, Meneghini, Matteo
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9416485/
https://www.ncbi.nlm.nih.gov/pubmed/36014188
http://dx.doi.org/10.3390/mi13081266

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9416485/
https://www.ncbi.nlm.nih.gov/pubmed/36014188
http://dx.doi.org/10.3390/mi13081266

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