Cargando…

Impact of Generation and Relocation of Defects on Optical Degradation of Multi-Quantum-Well InGaN/GaN-Based Light-Emitting Diode

The defectiveness of InGaN-based quantum wells increases with low indium contents, due to the compressive strain induced by the lattice mismatch between the InGaN and GaN layers, and to the stronger incorporation of defects favored by the presence of indium. Such defects can limit the performance an...

Descripción completa

Detalles Bibliográficos
Autores principales:	Casu, Claudia, Buffolo, Matteo, Caria, Alessandro, De Santi, Carlo, Zanoni, Enrico, Meneghesso, Gaudenzio, Meneghini, Matteo
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2022
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9416485/ https://www.ncbi.nlm.nih.gov/pubmed/36014188 http://dx.doi.org/10.3390/mi13081266

Ejemplares similares

Power GaN devices: materials, applications and reliability
por: Meneghini, Matteo, et al.
Publicado: (2016)

Understanding the Leakage Mechanisms and Breakdown Limits of Vertical GaN-on-Si p(+)n(−)n Diodes: The Road to Reliable Vertical MOSFETs
por: Mukherjee, Kalparupa, et al.
Publicado: (2021)

GaN-Based Laser Wireless Power Transfer System
por: De Santi, Carlo, et al.
Publicado: (2018)

Trap-state mapping to model GaN transistors dynamic performance
por: Modolo, Nicola, et al.
Publicado: (2022)

Substrate-Free InGaN/GaN Nanowire Light-Emitting Diodes
por: Neplokh, Vladimir, et al.
Publicado: (2015)

Advantages of InGaN–GaN–InGaN Delta Barriers for InGaN-Based Laser Diodes
por: Cheng, Liwen, et al.
Publicado: (2021)

Gradual Degradation of InGaAs LEDs: Impact on Non-Radiative Lifetime and Extraction of Defect Characteristics
por: Buffolo, Matteo, et al.
Publicado: (2021)

InGaN/GaN multilayer quantum dots yellow-green light-emitting diode with optimized GaN barriers
por: Lv, Wenbin, et al.
Publicado: (2012)

Use of Bilayer Gate Insulator in GaN-on-Si Vertical Trench MOSFETs: Impact on Performance and Reliability
por: Mukherjee, Kalparupa, et al.
Publicado: (2020)

Insight into the performance of multi-color InGaN/GaN nanorod light emitting diodes
por: Robin, Y., et al.
Publicado: (2018)

InGaN Light-Emitting Diodes with an Embedded Nanoporous GaN Distributed Bragg Reflectors
por: Shiu, Guo-Yi, et al.
Publicado: (2016)

Challenges and Perspectives for Vertical GaN-on-Si Trench MOS Reliability: From Leakage Current Analysis to Gate Stack Optimization
por: Mukherjee, Kalparupa, et al.
Publicado: (2021)

Effect of Same-Temperature GaN Cap Layer on the InGaN/GaN Multiquantum Well of Green Light-Emitting Diode on Silicon Substrate
por: Zheng, Changda, et al.
Publicado: (2013)

Carrier localization in In-rich InGaN/GaN multiple quantum wells for green light-emitting diodes
por: Jeong, Hyun, et al.
Publicado: (2015)

Defect-selective-etched porous GaN as a buffer layer for high efficiency InGaN/GaN light-emitting diodes
por: Park, Ah Hyun, et al.
Publicado: (2022)

Enhanced Optoelectronic Performance of Yellow Light-Emitting Diodes Grown on InGaN/GaN Pre-Well Structure
por: Zhao, Xiaoyu, et al.
Publicado: (2021)

The effect of free-standing GaN substrate on carrier localization in ultraviolet InGaN light-emitting diodes
por: Tsai, Ming-Ta, et al.
Publicado: (2014)

Light-Emitting Diodes Based on InGaN/GaN Nanowires on Microsphere-Lithography-Patterned Si Substrates
por: Dvoretckaia, Liliia, et al.
Publicado: (2022)

Investigation of Forward Tunneling Characteristics of InGaN/GaN Blue Light-Emitting Diodes on Freestanding GaN Detached from a Si Substrate
por: Lee, Moonsang, et al.
Publicado: (2018)

Optoelectronic Performance Variations in InGaN/GaN Multiple-Quantum-Well Light-Emitting Diodes: Effects of Potential Fluctuation
por: Islam, Abu Bashar Mohammad Hamidul, et al.
Publicado: (2018)

Stretchable Transparent Light-Emitting Diodes Based on InGaN/GaN Quantum Well Microwires and Carbon Nanotube Films
por: Kochetkov, Fedor M., et al.
Publicado: (2021)

Vertical Leakage in GaN-on-Si Stacks Investigated by a Buffer Decomposition Experiment
por: Tajalli, Alaleh, et al.
Publicado: (2020)

Demonstration of Efficient Ultrathin Side-Emitting InGaN/GaN Flip-Chip Light-Emitting Diodes by Double Side Reflectors
por: Kim, Tae Kyoung, et al.
Publicado: (2022)

Luminescence studies on green emitting InGaN/GaN MQWs implanted with nitrogen
por: Sousa, Marco A., et al.
Publicado: (2015)

Investigation on the corrosive effect of NH(3) during InGaN/GaN multi-quantum well growth in light emitting diodes
por: Yang, J., et al.
Publicado: (2017)

Emission Characteristics of InGaN/GaN Core-Shell Nanorods Embedded in a 3D Light-Emitting Diode
por: Jung, Byung Oh, et al.
Publicado: (2016)

Experimental and Modeling Investigations of Miniaturization in InGaN/GaN Light-Emitting Diodes and Performance Enhancement by Micro-Wall Architecture
por: Zhang, Yiping, et al.
Publicado: (2021)

InGaN/GaN Distributed Feedback Laser Diodes with Surface Gratings and Sidewall Gratings
por: Deng, Zejia, et al.
Publicado: (2019)

Intersubband Transition in GaN/InGaN Multiple Quantum Wells
por: Chen, G., et al.
Publicado: (2015)

Carrier Dynamics and Electro-Optical Characterization of High-Performance GaN/InGaN Core-Shell Nanowire Light-Emitting Diodes
por: Nami, Mohsen, et al.
Publicado: (2018)

Significant improvement of reverse leakage current characteristics of Si-based homoepitaxial InGaN/GaN blue light emitting diodes
por: Lee, Moonsang, et al.
Publicado: (2019)

Power-Dependent Optical Characterization of the InGaN/GaN-Based Micro-Light-Emitting-Diode (LED) in High Spatial Resolution
por: Yang, Haifeng, et al.
Publicado: (2023)

Patterned growth of InGaN/GaN quantum wells on freestanding GaN grating by molecular beam epitaxy
por: Wang, Yongjin, et al.
Publicado: (2011)

High Breakdown Voltage and Low Buffer Trapping in Superlattice GaN-on-Silicon Heterostructures for High Voltage Applications
por: Tajalli, Alaleh, et al.
Publicado: (2020)

Intensive measures of luminescence in GaN/InGaN heterostructures
por: Hsiao, Jui-Ju, et al.
Publicado: (2019)

Broadband full-color monolithic InGaN light-emitting diodes by self-assembled InGaN quantum dots
por: Li, Hongjian, et al.
Publicado: (2016)

Recombination Pathways in Green InGaN/GaN Multiple Quantum Wells
por: Lin, Tao, et al.
Publicado: (2017)

Thermal and efficiency droop in InGaN/GaN light-emitting diodes: decoupling multiphysics effects using temperature-dependent RF measurements
por: Rashidi, Arman, et al.
Publicado: (2019)

Ultraviolet GaN Light-Emitting Diodes with Porous-AlGaN Reflectors
por: Fan, Feng-Hsu, et al.
Publicado: (2017)

Impact of Plasma Electron Flux on Plasma Damage‐Free Sputtering of Ultrathin Tin‐Doped Indium Oxide Contact Layer on p‐GaN for InGaN/GaN Light‐Emitting Diodes
por: Son, Kwang Jeong, et al.
Publicado: (2017)

Cannot write session to /tmp/vufind_sessions/sess_8b80uvpvaeai3v1mfbmno6e8na