Surface Morphology Evolution during Chemical Mechanical Polishing Based on Microscale Material Removal Modeling for Monocrystalline Silicon

Chemical–mechanical polishing (CMP) is widely adopted as a key bridge between fine rotation grinding and ion beam figuring in super-smooth monocrystalline silicon mirror manufacturing. However, controlling mid- to short-spatial-period errors during CMP is a challenge owing to the complex chemical–me...

Descripción completa

Detalles Bibliográficos
Autores principales: Xia, Jingjing, Yu, Jun, Lu, Siwen, Huang, Qiushi, Xie, Chun, Wang, Zhanshan
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9416575/
https://www.ncbi.nlm.nih.gov/pubmed/36013778
http://dx.doi.org/10.3390/ma15165641

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9416575/
https://www.ncbi.nlm.nih.gov/pubmed/36013778
http://dx.doi.org/10.3390/ma15165641

Ejemplares similares