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Surface Morphology Evolution during Chemical Mechanical Polishing Based on Microscale Material Removal Modeling for Monocrystalline Silicon
Chemical–mechanical polishing (CMP) is widely adopted as a key bridge between fine rotation grinding and ion beam figuring in super-smooth monocrystalline silicon mirror manufacturing. However, controlling mid- to short-spatial-period errors during CMP is a challenge owing to the complex chemical–me...
| Autores principales: | , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2022
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9416575/ https://www.ncbi.nlm.nih.gov/pubmed/36013778 http://dx.doi.org/10.3390/ma15165641 |