On-State Current Degradation Owing to Displacement Defect by Terrestrial Cosmic Rays in Nanosheet FET

Silicon displacement defects are caused by various effects. For instance, epitaxial crystalline silicon growth and ion implantation often result in defects induced by the fabrication process, whereas displacement damage is induced by terrestrial cosmic radiation. Clustered displacement damage report...

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Detalles Bibliográficos
Autores principales: Ha, Jonghyeon, Lee, Gyeongyeop, Bae, Hagyoul, Kim, Kihyun, Han, Jin-Woo, Kim, Jungsik
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9416744/
https://www.ncbi.nlm.nih.gov/pubmed/36014198
http://dx.doi.org/10.3390/mi13081276

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9416744/
https://www.ncbi.nlm.nih.gov/pubmed/36014198
http://dx.doi.org/10.3390/mi13081276

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