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On-State Current Degradation Owing to Displacement Defect by Terrestrial Cosmic Rays in Nanosheet FET
Silicon displacement defects are caused by various effects. For instance, epitaxial crystalline silicon growth and ion implantation often result in defects induced by the fabrication process, whereas displacement damage is induced by terrestrial cosmic radiation. Clustered displacement damage report...
| Autores principales: | , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2022
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9416744/ https://www.ncbi.nlm.nih.gov/pubmed/36014198 http://dx.doi.org/10.3390/mi13081276 |