Monte Carlo simulation of nanoscale material focused ion beam gas-assisted etching: Ga(+) and Ne(+) etching of SiO(2) in the presence of a XeF(2) precursor gas

Elucidating energetic particle-precursor gas–solid interactions is critical to many atomic and nanoscale synthesis approaches. Focused ion beam sputtering and gas-assisted etching are among the more commonly used direct-write nanomachining techniques that have been developed. Here, we demonstrate a...

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Detalles Bibliográficos
Autores principales: Mahady, Kyle T., Tan, Shida, Greenzweig, Yuval, Raveh, Amir, Rack, Philip D.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: RSC 2019
Materias:
Chemistry
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9416977/
https://www.ncbi.nlm.nih.gov/pubmed/36133559
http://dx.doi.org/10.1039/c9na00390h

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9416977/
https://www.ncbi.nlm.nih.gov/pubmed/36133559
http://dx.doi.org/10.1039/c9na00390h

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