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Monte Carlo simulation of nanoscale material focused ion beam gas-assisted etching: Ga(+) and Ne(+) etching of SiO(2) in the presence of a XeF(2) precursor gas
Elucidating energetic particle-precursor gas–solid interactions is critical to many atomic and nanoscale synthesis approaches. Focused ion beam sputtering and gas-assisted etching are among the more commonly used direct-write nanomachining techniques that have been developed. Here, we demonstrate a...
| Autores principales: | , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
RSC
2019
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9416977/ https://www.ncbi.nlm.nih.gov/pubmed/36133559 http://dx.doi.org/10.1039/c9na00390h |