Reply to the ‘Comment on “Design and circuit simulation of nanoscale vacuum channel transistors”’ by R. Forbes, Nanoscale Adv., 2020, 2, DOI: 10.1039/D0NA00687D

Prof. Forbes takes a critical view of our paper on nanoscale vacuum channel transistors (NVCTs), arguing mainly about the weaknesses in the theory of field electron emission. On the one hand, we agree with the theoretical derivation details given by Prof. Forbes, and we would correct the “simplified...

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Detalles Bibliográficos
Autores principales: Xu, Ji, Qin, Yaling, Shi, Yongjiao, Shi, Yutong, Yang, Yang, Zhang, Xiaobing
Formato: Online Artículo Texto
Lenguaje:English
Publicado: RSC 2021
Materias:
Chemistry
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9417264/
https://www.ncbi.nlm.nih.gov/pubmed/36136427
http://dx.doi.org/10.1039/d0na00921k

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9417264/
https://www.ncbi.nlm.nih.gov/pubmed/36136427
http://dx.doi.org/10.1039/d0na00921k

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