Reply to the ‘Comment on “Design and circuit simulation of nanoscale vacuum channel transistors”’ by R. Forbes, Nanoscale Adv., 2020, 2, DOI: 10.1039/D0NA00687D

Prof. Forbes takes a critical view of our paper on nanoscale vacuum channel transistors (NVCTs), arguing mainly about the weaknesses in the theory of field electron emission. On the one hand, we agree with the theoretical derivation details given by Prof. Forbes, and we would correct the “simplified...

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Detalles Bibliográficos
Autores principales: Xu, Ji, Qin, Yaling, Shi, Yongjiao, Shi, Yutong, Yang, Yang, Zhang, Xiaobing
Formato: Online Artículo Texto
Lenguaje:English
Publicado: RSC 2021
Materias:
Chemistry
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9417264/
https://www.ncbi.nlm.nih.gov/pubmed/36136427
http://dx.doi.org/10.1039/d0na00921k
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author Xu, Ji
Qin, Yaling
Shi, Yongjiao
Shi, Yutong
Yang, Yang
Zhang, Xiaobing
author_facet Xu, Ji
Qin, Yaling
Shi, Yongjiao
Shi, Yutong
Yang, Yang
Zhang, Xiaobing
author_sort Xu, Ji
collection PubMed
description Prof. Forbes takes a critical view of our paper on nanoscale vacuum channel transistors (NVCTs), arguing mainly about the weaknesses in the theory of field electron emission. On the one hand, we agree with the theoretical derivation details given by Prof. Forbes, and we would correct the “simplified formula” accordingly (eqn (2)–(5)). On the other hand, the main part of our work focuses on the simulation results of structural parameters and circuit behavior, which is not involved with eqn (2)–(5). Thus, the reported results and conclusions remain reliable.
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spelling pubmed-94172642022-09-20 Reply to the ‘Comment on “Design and circuit simulation of nanoscale vacuum channel transistors”’ by R. Forbes, Nanoscale Adv., 2020, 2, DOI: 10.1039/D0NA00687D Xu, Ji Qin, Yaling Shi, Yongjiao Shi, Yutong Yang, Yang Zhang, Xiaobing Nanoscale Adv Chemistry Prof. Forbes takes a critical view of our paper on nanoscale vacuum channel transistors (NVCTs), arguing mainly about the weaknesses in the theory of field electron emission. On the one hand, we agree with the theoretical derivation details given by Prof. Forbes, and we would correct the “simplified formula” accordingly (eqn (2)–(5)). On the other hand, the main part of our work focuses on the simulation results of structural parameters and circuit behavior, which is not involved with eqn (2)–(5). Thus, the reported results and conclusions remain reliable. RSC 2021-02-08 /pmc/articles/PMC9417264/ /pubmed/36136427 http://dx.doi.org/10.1039/d0na00921k Text en This journal is © The Royal Society of Chemistry https://creativecommons.org/licenses/by-nc/3.0/
spellingShingle Chemistry
Xu, Ji
Qin, Yaling
Shi, Yongjiao
Shi, Yutong
Yang, Yang
Zhang, Xiaobing
Reply to the ‘Comment on “Design and circuit simulation of nanoscale vacuum channel transistors”’ by R. Forbes, Nanoscale Adv., 2020, 2, DOI: 10.1039/D0NA00687D
title Reply to the ‘Comment on “Design and circuit simulation of nanoscale vacuum channel transistors”’ by R. Forbes, Nanoscale Adv., 2020, 2, DOI: 10.1039/D0NA00687D
title_full Reply to the ‘Comment on “Design and circuit simulation of nanoscale vacuum channel transistors”’ by R. Forbes, Nanoscale Adv., 2020, 2, DOI: 10.1039/D0NA00687D
title_fullStr Reply to the ‘Comment on “Design and circuit simulation of nanoscale vacuum channel transistors”’ by R. Forbes, Nanoscale Adv., 2020, 2, DOI: 10.1039/D0NA00687D
title_full_unstemmed Reply to the ‘Comment on “Design and circuit simulation of nanoscale vacuum channel transistors”’ by R. Forbes, Nanoscale Adv., 2020, 2, DOI: 10.1039/D0NA00687D
title_short Reply to the ‘Comment on “Design and circuit simulation of nanoscale vacuum channel transistors”’ by R. Forbes, Nanoscale Adv., 2020, 2, DOI: 10.1039/D0NA00687D
title_sort reply to the ‘comment on “design and circuit simulation of nanoscale vacuum channel transistors”’ by r. forbes, nanoscale adv., 2020, 2, doi: 10.1039/d0na00687d
topic Chemistry
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9417264/
https://www.ncbi.nlm.nih.gov/pubmed/36136427
http://dx.doi.org/10.1039/d0na00921k
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