Selective area growth of GaN nanowires and nanofins by molecular beam epitaxy on heteroepitaxial diamond (001) substrates

GaN-on-diamond is a promising route towards reliable high-power transistor devices with outstanding performances due to better heat management, replacing common GaN-on-SiC technologies. Nevertheless, the implementation of GaN-on-diamond remains challenging. In this work, the selective area growth of...

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Detalles Bibliográficos
Autores principales: Pantle, Florian, Becker, Fabian, Kraut, Max, Wörle, Simon, Hoffmann, Theresa, Artmeier, Sabrina, Stutzmann, Martin
Formato: Online Artículo Texto
Lenguaje:English
Publicado: RSC 2021
Materias:
Chemistry
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9417268/
https://www.ncbi.nlm.nih.gov/pubmed/36133019
http://dx.doi.org/10.1039/d1na00221j

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9417268/
https://www.ncbi.nlm.nih.gov/pubmed/36133019
http://dx.doi.org/10.1039/d1na00221j

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