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Repairing the N-vacancy in an InN monolayer using NO molecules: a first-principles study
The synthesis of a perfect InN monolayer is important to achieve desirable properties for the further investigation and application of InN monolayers. However, the inevitably existing defects, such as an N-vacancy, in the synthesized InN nanomaterials would significantly impair their geometric and e...
| Autores principales: | , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
RSC
2019
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9417337/ https://www.ncbi.nlm.nih.gov/pubmed/36134219 http://dx.doi.org/10.1039/c9na00041k |