Cargando…
Repairing the N-vacancy in an InN monolayer using NO molecules: a first-principles study
The synthesis of a perfect InN monolayer is important to achieve desirable properties for the further investigation and application of InN monolayers. However, the inevitably existing defects, such as an N-vacancy, in the synthesized InN nanomaterials would significantly impair their geometric and e...
Autores principales: | Cui, Hao, Chen, Dachang, Yan, Chao, Zhang, Ying, Zhang, Xiaoxing |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
RSC
2019
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9417337/ https://www.ncbi.nlm.nih.gov/pubmed/36134219 http://dx.doi.org/10.1039/c9na00041k |
Ejemplares similares
-
First-principles prediction of chemically functionalized InN monolayers: electronic and optical properties
por: Vu, Tuan V., et al.
Publicado: (2020) -
First-Principles Investigation of the Adsorption Behaviors of CH(2)O on BN, AlN, GaN, InN, BP, and P Monolayers
por: Feng, Chuang, et al.
Publicado: (2019) -
First-principles study of vacancy defects at interfaces between monolayer MoS(2) and Au
por: Qiu, Xiaoqian, et al.
Publicado: (2020) -
First-Principles Study of Au-Doped InN Monolayer as Adsorbent and Gas Sensing Material for SF(6) Decomposed Species
por: Peng, Ruochen, et al.
Publicado: (2021) -
First-Principles Study on III-Nitride Polymorphs: AlN/GaN/InN in the Pmn2(1) Phase
por: Zhang, Zheren, et al.
Publicado: (2020)