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Repairing the N-vacancy in an InN monolayer using NO molecules: a first-principles study

The synthesis of a perfect InN monolayer is important to achieve desirable properties for the further investigation and application of InN monolayers. However, the inevitably existing defects, such as an N-vacancy, in the synthesized InN nanomaterials would significantly impair their geometric and e...

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Detalles Bibliográficos
Autores principales:	Cui, Hao, Chen, Dachang, Yan, Chao, Zhang, Ying, Zhang, Xiaoxing
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	RSC 2019
Materias:	Chemistry
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9417337/ https://www.ncbi.nlm.nih.gov/pubmed/36134219 http://dx.doi.org/10.1039/c9na00041k

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