The dual interfacial modification of 2D g-C(3)N(4) for high-efficiency and stable planar perovskite solar cells

Carrier recombination and charge loss at the interfaces of perovskite layers have a significant influence on high-performance planar perovskite solar cells (PSCs). We employed two-dimensional graphitic carbon nitride (g-C(3)N(4)), which is a heat-resistant n-type semiconductor, to modify the electro...

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Detalles Bibliográficos
Autores principales: Liu, Zhou, Wu, Shuzhen, Yang, Xiaojie, Zhou, Yijun, Jin, Jiaren, Sun, Junmei, Zhao, Li, Wang, Shimin
Formato: Online Artículo Texto
Lenguaje:English
Publicado: RSC 2020
Materias:
Chemistry
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9417438/
https://www.ncbi.nlm.nih.gov/pubmed/36132046
http://dx.doi.org/10.1039/d0na00613k

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9417438/
https://www.ncbi.nlm.nih.gov/pubmed/36132046
http://dx.doi.org/10.1039/d0na00613k

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