Threshold reduction and yield improvement of semiconductor nanowire lasers via processing-related end-facet optimization

Both gain medium design and cavity geometry are known to be important for low threshold operation of semiconductor nanowire lasers. For many applications nanowire lasers need to be transferred from the growth substrate to a low-index substrate; however, the impact of the transfer process on optoelec...

Descripción completa

Detalles Bibliográficos
Autores principales: Alanis, Juan Arturo, Chen, Qian, Lysevych, Mykhaylo, Burgess, Tim, Li, Li, Liu, Zhu, Tan, Hark Hoe, Jagadish, Chennupati, Parkinson, Patrick
Formato: Online Artículo Texto
Lenguaje:English
Publicado: RSC 2019
Materias:
Chemistry
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9417496/
https://www.ncbi.nlm.nih.gov/pubmed/36134418
http://dx.doi.org/10.1039/c9na00479c

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9417496/
https://www.ncbi.nlm.nih.gov/pubmed/36134418
http://dx.doi.org/10.1039/c9na00479c

Ejemplares similares