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Threshold reduction and yield improvement of semiconductor nanowire lasers via processing-related end-facet optimization
Both gain medium design and cavity geometry are known to be important for low threshold operation of semiconductor nanowire lasers. For many applications nanowire lasers need to be transferred from the growth substrate to a low-index substrate; however, the impact of the transfer process on optoelec...
| Autores principales: | , , , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
RSC
2019
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9417496/ https://www.ncbi.nlm.nih.gov/pubmed/36134418 http://dx.doi.org/10.1039/c9na00479c |