Recent progress on kinetic control of chemical vapor deposition growth of high-quality wafer-scale transition metal dichalcogenides

2D transition metal dichalcogenides (TMDs) have attracted significant attention due to their unique physical properties. Chemical vapor deposition (CVD) is generally a promising method to prepare ideal TMD films with high uniformity, large domain size, good single-crystallinity, etc., at wafer-scale...

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Detalles Bibliográficos
Autores principales: Wang, Qun, Shi, Run, Zhao, Yaxuan, Huang, Runqing, Wang, Zixu, Amini, Abbas, Cheng, Chun
Formato: Online Artículo Texto
Lenguaje:English
Publicado: RSC 2021
Materias:
Chemistry
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9417528/
https://www.ncbi.nlm.nih.gov/pubmed/36133721
http://dx.doi.org/10.1039/d1na00171j

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9417528/
https://www.ncbi.nlm.nih.gov/pubmed/36133721
http://dx.doi.org/10.1039/d1na00171j

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