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Growth mechanism of CH(3)NH(3)I in a vacuum processed perovskite

In the field of halide perovskite research, the growth of high quality films has been a critical issue. Among the reported growth methods, vacuum processes have attracted much attention due to their accurate controllability and high reproducibility, as proven in the manufacture of vacuum deposited o...

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Autores principales: Kim, Beom-Soo, Han, Yoonjay, Kim, Jang-Joo
Formato: Online Artículo Texto
Lenguaje:English
Publicado: RSC 2020
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9417702/
https://www.ncbi.nlm.nih.gov/pubmed/36132785
http://dx.doi.org/10.1039/d0na00466a
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author Kim, Beom-Soo
Han, Yoonjay
Kim, Jang-Joo
author_facet Kim, Beom-Soo
Han, Yoonjay
Kim, Jang-Joo
author_sort Kim, Beom-Soo
collection PubMed
description In the field of halide perovskite research, the growth of high quality films has been a critical issue. Among the reported growth methods, vacuum processes have attracted much attention due to their accurate controllability and high reproducibility, as proven in the manufacture of vacuum deposited organic-light-emitting-diode industry. In a vacuum process, the major difficulty for growing a perovskite film is control of a precursor, methylammonium iodide (MAI), originating from its uncontrollable behavior i.e., a high working pressure and poor adsorption characteristics. Thus, it is crucial to understand the growth mechanism of MAI vapor for the successful application of vacuum processes in the growth of halide perovskite films. In this paper, we report the growth mechanism and deposition kinetics of MAI in a vacuum. Unlike that of conventional materials evaporated in a vacuum, the deposition rate of MAI was found to be much faster on the reactive surface, PbI(2), compared to other non-reactive materials. Surprisingly, a very thin (2 nm-thick) PbI(2) layer increased the initial growth rate of MAI 2.7-fold. Based on the real-time monitored data from a quartz microbalance and surface study, we suggest dipole-induced adsorption as the MAI growth mechanism on PbI(2) and the perovskite in the vacuum process. We believe that this work will provide meaningful insight into film growth in vacuum processed perovskites.
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spelling pubmed-94177022022-09-20 Growth mechanism of CH(3)NH(3)I in a vacuum processed perovskite Kim, Beom-Soo Han, Yoonjay Kim, Jang-Joo Nanoscale Adv Chemistry In the field of halide perovskite research, the growth of high quality films has been a critical issue. Among the reported growth methods, vacuum processes have attracted much attention due to their accurate controllability and high reproducibility, as proven in the manufacture of vacuum deposited organic-light-emitting-diode industry. In a vacuum process, the major difficulty for growing a perovskite film is control of a precursor, methylammonium iodide (MAI), originating from its uncontrollable behavior i.e., a high working pressure and poor adsorption characteristics. Thus, it is crucial to understand the growth mechanism of MAI vapor for the successful application of vacuum processes in the growth of halide perovskite films. In this paper, we report the growth mechanism and deposition kinetics of MAI in a vacuum. Unlike that of conventional materials evaporated in a vacuum, the deposition rate of MAI was found to be much faster on the reactive surface, PbI(2), compared to other non-reactive materials. Surprisingly, a very thin (2 nm-thick) PbI(2) layer increased the initial growth rate of MAI 2.7-fold. Based on the real-time monitored data from a quartz microbalance and surface study, we suggest dipole-induced adsorption as the MAI growth mechanism on PbI(2) and the perovskite in the vacuum process. We believe that this work will provide meaningful insight into film growth in vacuum processed perovskites. RSC 2020-07-24 /pmc/articles/PMC9417702/ /pubmed/36132785 http://dx.doi.org/10.1039/d0na00466a Text en This journal is © The Royal Society of Chemistry https://creativecommons.org/licenses/by-nc/3.0/
spellingShingle Chemistry
Kim, Beom-Soo
Han, Yoonjay
Kim, Jang-Joo
Growth mechanism of CH(3)NH(3)I in a vacuum processed perovskite
title Growth mechanism of CH(3)NH(3)I in a vacuum processed perovskite
title_full Growth mechanism of CH(3)NH(3)I in a vacuum processed perovskite
title_fullStr Growth mechanism of CH(3)NH(3)I in a vacuum processed perovskite
title_full_unstemmed Growth mechanism of CH(3)NH(3)I in a vacuum processed perovskite
title_short Growth mechanism of CH(3)NH(3)I in a vacuum processed perovskite
title_sort growth mechanism of ch(3)nh(3)i in a vacuum processed perovskite
topic Chemistry
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9417702/
https://www.ncbi.nlm.nih.gov/pubmed/36132785
http://dx.doi.org/10.1039/d0na00466a
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