A broadband ultraviolet light source using GaN quantum dots formed on hexagonal truncated pyramid structures

Group III-nitride semiconductor-based ultraviolet (UV) light emitting diodes have been suggested as a substitute for conventional arc-lamps such as mercury, xenon and deuterium arc-lamps, since they are compact, efficient and have a long lifetime. However, in previously reported studies, group III-n...

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Detalles Bibliográficos
Autores principales: Cho, Jong-Hoi, Lim, Seung-Hyuk, Jang, Min-Ho, Lee, Chulwon, Yeo, Hwan-Seop, Sim, Young Chul, Kim, Je-Hyung, Matta, Samuel, Alloing, Blandine, Leroux, Mathieu, Park, Seoung-Hwan, Brault, Julien, Cho, Yong-Hoon
Formato: Online Artículo Texto
Lenguaje:English
Publicado: RSC 2020
Materias:
Chemistry
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9417801/
https://www.ncbi.nlm.nih.gov/pubmed/36132295
http://dx.doi.org/10.1039/d0na00052c

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9417801/
https://www.ncbi.nlm.nih.gov/pubmed/36132295
http://dx.doi.org/10.1039/d0na00052c

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