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A broadband ultraviolet light source using GaN quantum dots formed on hexagonal truncated pyramid structures

Group III-nitride semiconductor-based ultraviolet (UV) light emitting diodes have been suggested as a substitute for conventional arc-lamps such as mercury, xenon and deuterium arc-lamps, since they are compact, efficient and have a long lifetime. However, in previously reported studies, group III-n...

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Autores principales: Cho, Jong-Hoi, Lim, Seung-Hyuk, Jang, Min-Ho, Lee, Chulwon, Yeo, Hwan-Seop, Sim, Young Chul, Kim, Je-Hyung, Matta, Samuel, Alloing, Blandine, Leroux, Mathieu, Park, Seoung-Hwan, Brault, Julien, Cho, Yong-Hoon
Formato: Online Artículo Texto
Lenguaje:English
Publicado: RSC 2020
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9417801/
https://www.ncbi.nlm.nih.gov/pubmed/36132295
http://dx.doi.org/10.1039/d0na00052c
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author Cho, Jong-Hoi
Lim, Seung-Hyuk
Jang, Min-Ho
Lee, Chulwon
Yeo, Hwan-Seop
Sim, Young Chul
Kim, Je-Hyung
Matta, Samuel
Alloing, Blandine
Leroux, Mathieu
Park, Seoung-Hwan
Brault, Julien
Cho, Yong-Hoon
author_facet Cho, Jong-Hoi
Lim, Seung-Hyuk
Jang, Min-Ho
Lee, Chulwon
Yeo, Hwan-Seop
Sim, Young Chul
Kim, Je-Hyung
Matta, Samuel
Alloing, Blandine
Leroux, Mathieu
Park, Seoung-Hwan
Brault, Julien
Cho, Yong-Hoon
author_sort Cho, Jong-Hoi
collection PubMed
description Group III-nitride semiconductor-based ultraviolet (UV) light emitting diodes have been suggested as a substitute for conventional arc-lamps such as mercury, xenon and deuterium arc-lamps, since they are compact, efficient and have a long lifetime. However, in previously reported studies, group III-nitride UV light emitting diodes did not show a broad UV spectrum range as conventional arc-lamps, which restricts their application in fields such as medical therapy and UV spectrophotometry. Here, we propose GaN quantum dots (QDs) grown on different facets of hexagonal truncated pyramid structures formed on a conventional (0001) sapphire substrate. A hexagonal truncated GaN pyramid structure includes {101̄1} semipolar facets as well as a (0001) polar facet, which have intrinsically different piezoelectric fields and growth rates of GaN QDs. Consequently, we successfully demonstrated a plateau-like broadband UV spectrum ranging from ∼400 nm (UV-A) to ∼270 nm (UV-C) from the GaN QDs. In addition, at the top-edge of the truncated pyramid structure, a strain was locally suppressed compared to the center of the truncated pyramid structure. As a result, various emission wavelengths in the UV range were achieved from the GaN QDs grown on the sidewall, top-edge and top-center of hexagonal truncated pyramid structures, which ultimately provide a broadband UV spectrum with high efficiency.
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spelling pubmed-94178012022-09-20 A broadband ultraviolet light source using GaN quantum dots formed on hexagonal truncated pyramid structures Cho, Jong-Hoi Lim, Seung-Hyuk Jang, Min-Ho Lee, Chulwon Yeo, Hwan-Seop Sim, Young Chul Kim, Je-Hyung Matta, Samuel Alloing, Blandine Leroux, Mathieu Park, Seoung-Hwan Brault, Julien Cho, Yong-Hoon Nanoscale Adv Chemistry Group III-nitride semiconductor-based ultraviolet (UV) light emitting diodes have been suggested as a substitute for conventional arc-lamps such as mercury, xenon and deuterium arc-lamps, since they are compact, efficient and have a long lifetime. However, in previously reported studies, group III-nitride UV light emitting diodes did not show a broad UV spectrum range as conventional arc-lamps, which restricts their application in fields such as medical therapy and UV spectrophotometry. Here, we propose GaN quantum dots (QDs) grown on different facets of hexagonal truncated pyramid structures formed on a conventional (0001) sapphire substrate. A hexagonal truncated GaN pyramid structure includes {101̄1} semipolar facets as well as a (0001) polar facet, which have intrinsically different piezoelectric fields and growth rates of GaN QDs. Consequently, we successfully demonstrated a plateau-like broadband UV spectrum ranging from ∼400 nm (UV-A) to ∼270 nm (UV-C) from the GaN QDs. In addition, at the top-edge of the truncated pyramid structure, a strain was locally suppressed compared to the center of the truncated pyramid structure. As a result, various emission wavelengths in the UV range were achieved from the GaN QDs grown on the sidewall, top-edge and top-center of hexagonal truncated pyramid structures, which ultimately provide a broadband UV spectrum with high efficiency. RSC 2020-02-11 /pmc/articles/PMC9417801/ /pubmed/36132295 http://dx.doi.org/10.1039/d0na00052c Text en This journal is © The Royal Society of Chemistry https://creativecommons.org/licenses/by-nc/3.0/
spellingShingle Chemistry
Cho, Jong-Hoi
Lim, Seung-Hyuk
Jang, Min-Ho
Lee, Chulwon
Yeo, Hwan-Seop
Sim, Young Chul
Kim, Je-Hyung
Matta, Samuel
Alloing, Blandine
Leroux, Mathieu
Park, Seoung-Hwan
Brault, Julien
Cho, Yong-Hoon
A broadband ultraviolet light source using GaN quantum dots formed on hexagonal truncated pyramid structures
title A broadband ultraviolet light source using GaN quantum dots formed on hexagonal truncated pyramid structures
title_full A broadband ultraviolet light source using GaN quantum dots formed on hexagonal truncated pyramid structures
title_fullStr A broadband ultraviolet light source using GaN quantum dots formed on hexagonal truncated pyramid structures
title_full_unstemmed A broadband ultraviolet light source using GaN quantum dots formed on hexagonal truncated pyramid structures
title_short A broadband ultraviolet light source using GaN quantum dots formed on hexagonal truncated pyramid structures
title_sort broadband ultraviolet light source using gan quantum dots formed on hexagonal truncated pyramid structures
topic Chemistry
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9417801/
https://www.ncbi.nlm.nih.gov/pubmed/36132295
http://dx.doi.org/10.1039/d0na00052c
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