Top-down fabrication of ordered arrays of GaN nanowires by selective area sublimation

We demonstrate the top-down fabrication of ordered arrays of GaN nanowires by selective area sublimation of pre-patterned GaN(0001) layers grown by hydride vapor phase epitaxy on Al(2)O(3). Arrays with nanowire diameters and spacings ranging from 50 to 90 nm and 0.1 to 0.7 μm, respectively, are simu...

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Detalles Bibliográficos
Autores principales: Fernández-Garrido, Sergio, Auzelle, Thomas, Lähnemann, Jonas, Wimmer, Kilian, Tahraoui, Abbes, Brandt, Oliver
Formato: Online Artículo Texto
Lenguaje:English
Publicado: RSC 2019
Materias:
Chemistry
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9417832/
https://www.ncbi.nlm.nih.gov/pubmed/36134215
http://dx.doi.org/10.1039/c8na00369f

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9417832/
https://www.ncbi.nlm.nih.gov/pubmed/36134215
http://dx.doi.org/10.1039/c8na00369f

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