Modulation of electrical properties in MoTe(2) by XeF(2)-mediated surface oxidation

Transition metal dichalcogenides (TMDs) are promising candidates for the semiconductor industry owing to their superior electrical properties. Their surface oxidation is of interest because their electrical properties can be easily modulated by an oxidized layer on top of them. Here, we demonstrate...

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Detalles Bibliográficos
Autores principales: Ji, Eunji, Kim, Jong Hun, Lee, Wanggon, Shin, June-Chul, Seo, Hyungtak, Ihm, Kyuwook, Park, Jin-Woo, Lee, Gwan-Hyoung
Formato: Online Artículo Texto
Lenguaje:English
Publicado: RSC 2022
Materias:
Chemistry
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9417833/
https://www.ncbi.nlm.nih.gov/pubmed/36131764
http://dx.doi.org/10.1039/d1na00783a

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9417833/
https://www.ncbi.nlm.nih.gov/pubmed/36131764
http://dx.doi.org/10.1039/d1na00783a

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