Electrically tunable spin–orbit interaction in an InAs nanosheet

We report an experimental study of the spin–orbit interaction (SOI) in an epitaxially grown free-standing InAs nanosheet in a dual-gate field-effect device. Gate-transfer characteristic measurements show that independent tuning of the carrier density in the nanosheet and the potential difference acr...

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Detalles Bibliográficos
Autores principales: Fan, Furong, Chen, Yuanjie, Pan, Dong, Zhao, Jianhua, Xu, H. Q.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: RSC 2022
Materias:
Chemistry
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9417834/
https://www.ncbi.nlm.nih.gov/pubmed/36132279
http://dx.doi.org/10.1039/d2na00143h

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9417834/
https://www.ncbi.nlm.nih.gov/pubmed/36132279
http://dx.doi.org/10.1039/d2na00143h

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