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Electrically tunable spin–orbit interaction in an InAs nanosheet

We report an experimental study of the spin–orbit interaction (SOI) in an epitaxially grown free-standing InAs nanosheet in a dual-gate field-effect device. Gate-transfer characteristic measurements show that independent tuning of the carrier density in the nanosheet and the potential difference acr...

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Detalles Bibliográficos
Autores principales:	Fan, Furong, Chen, Yuanjie, Pan, Dong, Zhao, Jianhua, Xu, H. Q.
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	RSC 2022
Materias:	Chemistry
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9417834/ https://www.ncbi.nlm.nih.gov/pubmed/36132279 http://dx.doi.org/10.1039/d2na00143h

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